SUB65P04-15 데이터 시트보기 (PDF) - Vishay Semiconductors
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SUB65P04-15 Datasheet PDF : 6 Pages
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SUP/SUB65P04-15
Vishay Siliconix
P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
- 40
RDS(on) (Ω)
0.015 at VGS = - 10 V
0.023 at VGS = - 4.5 V
ID (A)
- 65
- 50
FEATURES
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
TO-263
S
DRAIN connected to TAB
GD S
Top View
SUP65P04-15
G DS
Top View
SUB65P04-15
Ordering Information: SUP65P04-15-E3 (Lead (Pb)-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.1 mH
EAR
Power Dissipation
TC = 25 °C (TO-220AB and TO-263)
TA = 25 °C (TO-263)b
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 40
± 20
- 65
- 37
- 240
- 60
180
120c
3.75
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB Mount (TO-263)b
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Duty cycle ≤ 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
Symbol
RthJA
RthJA
RthJC
Limit
40
62.5
1.25
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 71174
www.vishay.com
S11-2308-Rev. B, 21-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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