SUB65P04-15 데이터 시트보기 (PDF) - Vishay Semiconductors

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SUB65P04-15

P-Channel 40 V (D-S) 175 °C MOSFET

Vishay Semiconductors 

SUP/SUB65P04-15

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

2.0

100

VGS = 10 V

ID = 30 A

1.5

1.0

10

TJ = 150 °C

0.5

0

- 50 - 25

0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

1000

100

IAV (A) at TA = 25 °C

10

IAV (A) at TA = 150 °C

1

0.1

0.00001 0.0001 0.001

0.01

0.1

1

tin (s)

Avalanche Current vs. Time

TJ = 25 °C

1

0

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

60

ID = 250 µA

55

50

45

40

35

- 50 - 25

0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Drain Source Breakdown vs.

Junction Temperature

www.vishay.com

Document Number: 71174

4

S11-2308-Rev. B, 21-Nov-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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