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SUD50N06-07L-E3 데이터 시트보기 (PDF) - Unspecified

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SUD50N06-07L-E3
SHENZHENFREESCALE
Unspecified SHENZHENFREESCALE
SUD50N06-07L-E3 Datasheet PDF : 5 Pages
1 2 3 4 5
SUD50N06-07L
N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125 °C
VDS = 60 V, VGS = 0 V, TJ = 175 °C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS = 10 V, ID = 20 A, TJ = 175 °C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Ciss
Coss
Crss
Qg
VGS = 0 V, VDS = 25 V, f = 1 MHz
Gate-Source Chargec
Qgs
VDS = 30 V, VGS = 10 V, ID = 50 A
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rg
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 30 V, RL = 0.6 Ω
ID 50 A, VGEN = 10 V, Rg = 2.5 Ω
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics
Continuous Current
IS
(TC = 25 °C)b
Pulsed Current
ISM
Forward Voltagea
VSD
IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 30 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min
Typ
Max
Unit
60
V
1
3
± 100
nA
1
50
µA
150
50
A
0.0061 0.0074
0.0122
Ω
0.0148
0.0071 0.0088
20
80
S
5800
450
pF
300
96
144
19
nC
20
1.5
Ω
15
25
13
20
ns
62
95
14
25
50
A
100
0.90
1.50
V
37
55
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2/5
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