SUM110N04-05H(2006) 데이터 시트보기 (PDF) - Vishay Semiconductors

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SUM110N04-05H
(Rev.:2006)

N-Channel 40-V (D-S) 175°C MOSFET

Vishay Semiconductors 

SPICE Device Model SUM110N04-05H

Vishay Siliconix

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Static

Gate Threshold Voltage

On-State Drain Currenta

VGS(th)

ID(on)

Drain-Source On-State Resistancea

rDS(on)

Forward Voltagea

VSD

Dynamicb

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Chargec

Qg

Gate-Source Chargec

Qgs

Gate-Drain Chargec

Qgd

Notes

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

VDS = VGS, ID = 250 µA

VDS = 5 V, VGS = 10 V

VGS = 10 V, ID = 30 A

VGS = 10 V, ID = 30 A, TJ = 125°C

VGS = 10 V, ID = 30 A, TJ = 175°C

IF = 30 A, VGS = 0 V

VGS = 0 V, VDS = 25 V, f = 1 MHz

VDS = 20 V, VGS = 10 V, ID = 50 A

Simulated Measured

Data

Data

3.6

704

0.0046

0.0076

0.0084

0.89

0.0044

0.90

6400

659

268

99

37

21

6700

600

320

95

37

21

Unit

V

A

Ω

V

pF

nC

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Document Number: 73146

S-60676Rev. B, 01-May-06

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