SWI1N60C 데이터 시트보기 (PDF) - Xian Semipower Electronic Technology Co., Ltd.
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SWI1N60C Datasheet PDF : 7 Pages
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SAMWIN
SW1N60C
N-channel D-PAK/I-PAK/TO-92 MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 9 Ω)@VGS=10V
■ Gate Charge (Max 6nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-251
TO-252
TO-92
12 3
12
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at AC adaptors and SMPS.
BVDSS : 600V
ID
: 1.0A
RDS(ON) : 9.0ohm
2
1
3
Order Codes
Item
Sales Type
1
SW C 1N60C
2
SW I 1N60C
3
SW D 1N60C
Marking
SW1N60C
SW1N60C
SW1N60C
Package
TO-92
TO-251
TO-252
Packaging
TAPE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
TO-92
0.8
0.5
2.0
3
0.025
260
Value
TO-251 TO-252
600
1.0
0.65
4.0
± 30
52
0.3
4.5
30
0.23
-55 ~ + 150
275
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
RthjC
RthCS
RthjA
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to Lead Max
Thermal resistance, Junction to ambient
TO-92
-
40
120
Value
TO-251
TO-252
4.2
-
100
Unit
oC/W
oC/W
oC/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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