T2096L(2005) 데이터 시트보기 (PDF) - Unisonic Technologies

부품명

상세내역

제조사

T2096L
(Rev.:2005)

HIGH VOLTAGE TRANSISTOR

Unisonic Technologies 

T2096

NPN SILICON TRANSISTOR

„ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

800

V

Collector-Emitter Voltage

VCES

800

V

Collector-Emitter Voltage

VCEO

400

V

Emitter-Base Voltage

VEBO

8

V

Base Current

IB

1

A

DC Collector Current

IC

2

A

Pulse Collector Current (Note 2)

Collector Dissipation

Junction Temperature

Storage Temperature

ICP

4

A

Ta=25℃

Tc=25℃

PC

1

W

15

TJ

150

°C

TSTG

-55 ~ +150

°C

Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse Test: Pulse Width ≤300μS, Duty Cycle≤10%

„ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Current Gain-Bandwidth Product

Output Capacitance

Turn-on Time

Storage Time

Fall Time

SYMBOL

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

ICBO

IEBO

hFE 1

hFE 2

fT

Cob

tON

tSTG

tF

TEST CONDITIONS

IC =1mA, IE =0

IC =5mA, RBE=∞

IE =1mA, IC =0

IC =1A, IB =0.2A

IC =1A, IB =0.2A

VCB =400V, IE =0

VEB =5V, IC =0

VCE =5V, IC =1mA

VCE =5V, IC =0.2A

VCE =10V, IC =0.2A

VCB =10V, f =1MHz

IC =1.0A, IB1 =0.05A

IB2 = -0.5A, RL =200Ω

VCC=200V

MIN TYP MAX UNIT

800

V

400

V

8

V

0.8

V

1.5

V

10 μA

10 μA

45

120

180

20

MHz

20

pF

0.5 μs

2.5 μs

0.3 μs

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R213-017,A

Share Link: