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TA8068L 데이터 시트보기 (PDF) - Toshiba
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TA8068L
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
Toshiba
TA8068L Datasheet PDF : 8 Pages
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8
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Supply Voltage
Input Voltage
Output Voltage
Output Current
Power Dissipation
Operation Temperature
Storage Temperature
Lead Temperature
−
Time
SYMBOL
V
CC
V
CC
V
IN
V
CC
I
O
AVE
P
D
T
opr
T
stg
T
sol
RATING
30
60 (1s)
−
0.3~7
−
0.3~V
CC
1.5
25
−
40~110
−
55~150
260 (10s)
UNIT
V
V
V
A
W
°C
°C
°C
TA8068L
ELECTRICAL CHARACTERISTICS
(V
CC
= 8~16V, Ta =
−
40~110°C)
CHARACTERISTIC
Current Consumption
Input Voltage
Input Current
Input Voltage
Output Saturation Voltage
TEST
SYMBOL
PIN
CIR-
TEST CONDITION
MIN
CUIT
I
CC
V
CC
―
12
V
IL
―
INA / INB
―
V
IH
―
2.4
I
IL
INA / INB
―
V
IN
= 0.4V
−
50
I
IH
―
V
IN
= 5V
―
V
IL
―
ST
―
V
IH
―
3.0
V
SAT
OA,
OA
OB,
OB
―
I
O
= 1.5A / Ta = 25°C
―
Output Leakage Current
I
LEAK
OA,
OA
OB,
OB
―
V
O
= V
CC
―
Output Voltage
V
OL
DG
―
I
OL
= 3mA
―
Output Leakage Current
I
LEAK
―
V
O
= V
CC
―
Over-current Detection
ISD
―
1.8
Shutdown Temperature
TSD-H
TSD-L
―
OUT = ON
→
OFF
―
―
OUT = OFF
→
ON
―
Over-voltage Detection
VSD
―
27.5
Standby Current
IST
V
CC
―
ST
= GND
―
Thermal Resistance
R
θ
j-c
―
―
Transfer Delay Time
t
pLH
―
―
t
pHL
―
―
TYP.
25
―
―
―
―
―
―
1.25
―
―
―
4
160
130
30
―
3
1
1
MAX UNIT
40
mA
0.8
V
―
―
µA
10
0.8
V
―
1.5
V
10
µA
0.3
V
10
µA
6
A
―
°C
―
33
V
100
µA
―
°C / W
10
µs
10
4
2002-02-27
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