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TA8082H 데이터 시트보기 (PDF) - Toshiba
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TA8082H
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
Toshiba
TA8082H Datasheet PDF : 7 Pages
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TA8082H
ELECTRICAL CHARACTERISTICS
(V
CC
= 6~16V, Tc =
−
40~110°C)
CHARACTERISTIC
SYMBOL
TEST
PIN
CIR- TEST CONDITION
MIN
CUIT
I
CC
1
―
CH1 / 2 Stop
―
Power Supply Current
I
CC
2
V
CC
1 / V
CC
2
―
CH1 or 2 CW / CCW
―
I
CC
3
―
CH1 / 2 CW / CCW
―
I
CC
4
―
CH1 / 2 Brake
―
Input Voltage
Input Current
V
IL
―
―
―
V
IH
DI1A / B
―
―
2.0
I
IL
DI2A / B
―
V
IN
= 0.4V
―
I
IH
―
V
IN
= V
CC
―
Output Saturation Voltage
V
sat
(total)
―
I
O
= 1.5A, Tc = 25°C
―
―
I
O
= 1.5A, Tc = 110°C
―
Output Leakage Current
I
LEAK-U
I
LEAK-L
M (+) / (
−
) 1 /
M (+) / (
−
) 2
―
V
OUT
= 0V
―
V
OUT
= V
CC
―
―
Diode Forward Voltage
V
F-U
V
F-L
―
―
I
F
= 1.5A
―
―
Output Voltage
V
OUT
DIAG1 / 2
―
I
OL
= 3mA
―
Output Leakage Current
I
LEAK
―
V
OUT
= V
CC
―
Over-current Detection
I
SD
―
―
―
2
Load-open Detection
I
OS
―
―
―
5
Shutdown Temperature
T
SD
―
―
―
―
Over-voltage Detection
V
SD
―
―
―
30
Thermal Resistance
R
θ
j-c
―
―
―
―
Transfer Delay Time
t
pLH
―
―
―
―
t
pHL
―
―
―
―
TYP.
―
20
40
16
―
―
10
140
2.2
2.2
―
―
2.6
1.5
0.2
―
3
10
150
32.5
4
1
1
MAX UNIT
0.1
40
mA
80
30
0.8
V
―
20
µA
300
2.9
V
2.8
−
10
µA
10
―
V
―
0.5
V
5
µA
4
A
20
mA
―
°C
35
V
―
°C / W
10
µs
10
4
2002-02-27
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