TA8126 데이터 시트보기 (PDF) - Toshiba

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TA8126

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Toshiba 

3. Pattern diagram

The Fig.3 shows the oscillation loop. This pattern diagram should be

small, because spurious radiation due to the oscillation is reduced. The

Fig.4 shows the rectifier loop. This pattern diagram should be of the

small, because spurious radiation due to the switching rectifier is

reduced. The two loops should be isolated from other DC lines.

TA8126S / F

4. Output voltage application

The output voltage is applicable to about 10V, too, in case of connecting

to external resistance "Rx = 30kΩ", as Fig.5. But, in this application, the

regulatory circuit doesn't operate, which is against fluctuation of supply

voltage and of ambient temperature.

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Supply voltage

Output voltage

Power dissipation

TA8126S

TA8126F

Operation temperature

Storage temperature

VCC

12

V

VO

35

V

750

PD (Note)

mW

400

Topr

−25~75

°C

Tstg

−55~150

°C

(Note) Derated above Ta = 25°C in the proportion of 6mW / °C

for TA8126s, and of 3.2mW / °C for TA8126F.

4

2002-10-30

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