TA8256 데이터 시트보기 (PDF) - Toshiba
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TA8256 Datasheet PDF : 11 Pages
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TA8256BH
Cautions
This IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak.
Please set the IC keeping the distance from CRT.
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply voltage
Output current (peak/ch)
Power dissipation
Operating temperature
Storage temperature
VCC
30
V
IO (peak)
2
A
PD (Note)
25
W
Topr
-20~75
°C
Tstg
-55~150
°C
Note: Derated above Ta = 25°C in the proportion of 200 mW/°C.
Electrical Characteristics
(Unless otherwise specified, VCC = 20 V, RL = 8 W, Rg = 620 W, f = 1 kHz, Ta = 25°C)
Characteristic
Quiescent current
Output power
Total harmonic distortion
Voltage gain
Input resistance
Ripple rejection ratio
Output noise voltage
Cross talk
Mute control voltage
Mute attenuation level
Symbol
ICCQ
Pout (1)
Pout (2)
THD (1)
THD (2)
Gv
RIN
R.R.
Vno
C.T.
Vth (ON)
Vth (OFF)
ATT
Test
Circuit
Test Condition
¾ Vin = 0
¾ THD = 10%
¾ THD = 1%
¾ Pout = 2 W
¾ Pout = 2 W, f = 10 kHz,
¾ Vout = 0.775 Vrms
¾
¾
¾
f = 100 Hz,
Vripple = 0.775 Vrms
¾
Rg = 10 kW,
BW = 20 Hz~20 kHz
¾ Vout = 0.775 Vrms
¾ MUTE ON
¾ MUTE OFF
¾ Vout = 0.775 Vrms ® Mute
Min. Typ. Max Unit
65 100 180 mA
5
6
¾
W
¾
4.5
¾
¾ 0.04 0.2
%
¾
0.1 0.6
32.5 34 35.5 dB
¾
34
¾
kW
-40 -47 ¾
dB
¾ 0.14 0.3 mVrms
¾ -60 ¾
dB
3.1
¾
VCC
V
0
¾
2.5
-52 -60 ¾
dB
4
2002-02-13
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