TA8211AH 데이터 시트보기 (PDF) - Toshiba
부품명
상세내역
제조사
TA8211AH Datasheet PDF : 10 Pages
| |||
TA8211AH
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
Output current (Peak/ch)
Power dissipation
Operating temperature
Storage temperature
VCC
30
V
IO (peak)
2
A
PD (Note)
25
W
Topr
-20~75
°C
Tstg
-55~150
°C
Note: Derated above Ta = 25°C in the proportion of 200 mW/°C.
Electrical Characteristics
(unless otherwise specified, VCC = 20 V, RL = 600 9, Rg = 600 9, f = 1 kHz, Ta = 25°C)
Characteristics
Quiescent current
Output power
Total harmonic distortion
Closed loop voltage gain
Open loop voltage gain
Input resistance
Ripple rejection ratio
Output noise voltage
Symbol
ICCQ
Pout (1)
Pout (2)
THD
GV
GVO
RIN
R.R.
Vno
Test
Circuit
Test Condition
¾ Vin = 0
¾ THD = 10%
¾ THD = 1%
¾ Pout = 2 W
¾ Vout = 0.775 Vrms (0dBm)
¾
¾
¾
¾
Rg = 0, fripple = 100 Hz
Vripple = 0.775 Vrms (0dBm)
¾
Rg = 10 kW,
BW = 20 Hz~20 kHz
Min Typ. Max Unit
¾
75 130 mA
5.0
6.0
¾
W
¾
4.5
¾
¾
0.1 0.6
%
32.5 34.0 35.5 dB
¾
60
¾
dB
¾
30
¾
kW
-45 -57 ¾
dB
¾ 0.14 0.3 mVrms
Typ. DC Voltage of Each Terminal (VCC = 20 V, Ta = 25°C)
Terminal No.
1
2
3
4
5
6
7
8
9
10
11
12
DC voltage (V)
2.1 2.25 GND 2.25 2.1
6.8
9.8 2.25 VCC GND 2.25 9.8
4
2002-02-13
Share Link: 