TA84002FG 데이터 시트보기 (PDF) - Toshiba
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TA84002FG Datasheet PDF : 18 Pages
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TA84002F
ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = 5 V, VM = 24 V)
CHARACTERISTIC
SYMBOL
TEST
CIR−
CUIT
TEST CONDITION
MIN TYP.
Input Voltage
Input Current
VIN(H)
VIN(L)
IIN(H)
IIN(L)
IIN(L)
ICC1
ICC2
ICC3
Supply Current
Output Saturation Voltage
(Lower−side)
ON Resistor (Upper−side)
Diode Forward Voltage (Lower−side)
Diode Forward Voltage (Upper−side)
ICC4
ICC5
IM1
IM2
IM3
VSAT1
VSAT2
Ron1
VF(L)
VF(H)
1 PHASE, ENABLE
2.0
―
GND
− 0.3 V
―
PHASE, ENABLE, VIN = 5 V
2 PHASE, VIN = GND
ENABLE, VIN = GND
3
ENABLE A / B = Low
2−Phase 100% ON
―
2
―
0
―
55
―
110
4
ENABLE A / B = Low
2−Phase 100% OFF
―
6
ENABLE A = Low,
3 B = High
1−Phase 100% ON
―
55
ENABLE A = Low,
4 B = High
1−Phase 100% OFF
―
6
3
ENABLE A / B = High
2−Phase OFF
―
6
ENABLE A / B = Low
2−Phase ON
―
5
ENABLE A = Low,
5 B = High
1−Phase ON
―
4.5
ENABLE A / B = High
2−Phase OFF
―
4
6 IO = 0.5 A
IO = 1.0 A
7 IO = 0.5 A
8 IF = 1.0 A
9 IF = 1.0 A
―
0.35
―
0.65
―
0.6
―
1.4
―
0.95
Reference Voltage Range
Vref
―
1.0
2.5
Reference Current
Reference Divider Ratio
Setting Current
Thermal Shutdown Temperature
Thermal Shutdown Hysteriesis
Output Leakage Current
Pch MOS Drive Current
Iref
GAIN
Iset
TSD
∆T
IL (H)
IL (L)
IG
10 Vref = 2.5 V
11 VNF / Vref
― Vref = 2.5 V, RNF = 1 Ω
― Tj
―
P−channel MOS
12
13
―
0.2
0.17 0.2
0.35 0.45
―
165
―
15
―
0
―
0
330 530
MAX
VCC +
0.3 V
0.8
20
1
100
180
14
90
14
14
13
11
9
0.8
2.0
1.0
2.0
1.8
VCC −
0.5
5
0.23
0.55
―
―
100
50
730
UNIT
V
µA
mA
V
Ω
V
V
V
µA
A
°C
°C
µA
µA
8
2001-09-06
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