TAT2814A1L(2014) 데이터 시트보기 (PDF) - TriQuint Semiconductor
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TAT2814A1L Datasheet PDF : 12 Pages
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TAT2814A1L
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−40 to +100 °C
Device Voltage (VDD)
+10 V
RF Input Power (single tone)
+10 dBm
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min Typ Max Units
VDD - Stage 1
+5
V
VPA - Stage 2
+8
V
Operating Ambient Temp. −40
+85 °C
Tj (for >106 hours MTTF)
150 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VDD = +5 V, VPA = +8 V, TAMBIENT = +25 °C, Includes input and output balun losses
Parameter
Conditions
Min Typ Max Units
Operational Frequency Range
45
1003
MHz
Gain
IAGC= 1 mA, f= 1003 MHz
27.5
30
32
dB
Gain Variation over Temp (1)
Maximum gain deviation within passband within
temp. range of −40 °C to +85 °C relative to +25 °C.
1.0
dB
Gain Flatness
Gain Slope
Attenuator Range
Peak deviation from straight line across full band.
±0.25
±0.5
dB
Max slope of best fit straight line over all attenuator
−1.4
−1.0
dB
sMeattxinGgasin - Min Gain
18
dB
Input Return Loss
IAGC= 1 mA
18
dB
Output Return Loss
IAGC= 1 mA
20
dB
EQAM VOUT
Adjacent (1, 2)
Four Channel ACPR
on a Single Port
Next-adjacent channel (1, 3)
+55
+56
Third-adjacent channel (1, 4)
dBmV /
chan.
EQAM Vout (1, 5)
Single Channel Harmonics
+63
+64
dBmV
Output P1dB
+28
dBm
Output IP3
Pout=+8 dBm/tone, 6 MHz tone spacing
+49
dBm
Noise Figure
2.7
dB
1st Stage Current
VDD=+5 V
290
330
mA
2nd Stage Current
VPA=+5 V
415
450
mA
Power Down DC Control Pin 12)
Input High Voltage 1.8
Input Low Voltage
Input High Current
Input Low Current
V
0.5
300
uA
−-50
AGC Input Current (Pin 14)
−40
−1
mA
Thermal Resistance, θjc (6)
11.8
°C/W
Notes:
1. Production tested at 66 and 990 MHz.
2. Adjacent channel (750 kHz from channel block edge to 6 MHz from channel block edge) better than −60 dBc.
3. Next-adjacent channel (6 MHz from channel block edge to 12 MHz from channel block edge) better than −63 dBc.
4. Third-adjacent channel (12 MHz from channel block edge to 18 MHz from channel block edge) better than −65 dBc.
5. In each of 2N contiguous 6 MHz channels or in each of 3N contiguous 6 MHz channels coinciding with 2nd harmonic and with
3rd harmonic components, respectively (up to 1002 MHz) better than −63 dBc..
6. ϴjb = (Tjmax - Tgroundslug)/Pdiss , where Pdiss = power dissipated in the 2nd stage amplifier (power amplifier)
Datasheet: Rev. H 11-12-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
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