TC1072/TC1073
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
† Note: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VIN
IOUTMAX
Input Operating Voltage
Maximum Output Current
2.7
—
50
—
100
—
6.0
V Note 9
—
mA TC1072
—
mA TC1073
VOUT
Output Voltage
VR – VR ±0.5% VR + 2.5%
V
Note 1
2.5%
TCVOUT
VOUT Temperature Coefficient
—
20
—
ppm/°C Note 2
—
40
—
ΔVOUT/ΔVIN Line Regulation
ΔVOUT/VOUT Load Regulation
—
0.05
0.35
% (VR + 1V) ≤ VIN ≤ 6V
—
0.5
2.0
%
IL = 0.1 mA to IOUTMAX
(Note 3)
VIN-VOUT
Dropout Voltage
—
2
—
mV IL = 0.1 mA
—
65
—
IL = 20 mA
—
85
120
IL = 50 mA
—
180
250
IL = 100 mA (Note 4),
TC1073
IIN
Supply Current
—
IINSD
Shutdown Supply Current
—
PSRR
Power Supply Rejection Ratio
—
IOUTSC
Output Short Circuit Current
—
ΔVOUT/ΔPD Thermal Regulation
—
TSD
Thermal Shutdown Die Temperature
—
ΔTSD
Thermal Shutdown Hysteresis
—
eN
Output Noise
—
50
0.05
64
300
0.04
160
10
260
80
µA SHDN = VIH, IL = 0 (Note 8)
0.5
µA SHDN = 0V
—
dB FRE ≤ 1 kHz
450
mA VOUT = 0V
—
V/W Notes 5, 6
—
°C
—
°C
—
nV/√Hz IL = IOUTMAX
470 pF from Bypass to GND
Note 1: VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2: TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ΔT
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
7: Hysteresis voltage is referenced by VR.
8: Apply for Junction Temperatures of -40°C to +85°C.
9: The minimum VIN has to justify the conditions = VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.
DS21354D-page 2
© 2007 Microchip Technology Inc.