TC1101V 데이터 시트보기 (PDF) - Transcom, Inc.

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TC1101V

Low Noise and Medium Power GaAs FETs

Transcom, Inc. 

CHIP DIMENSIONS

2906 12

D

S

G

S

2506 12

TC1101V

REV6_20070502

Units: Micrometers

Chip Thickness: 55

Gate Pad: 55 x 50

Drain Pad: 55 x 50

Source Pad: 55 x 60

CHIP HANDLING

DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be

accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290°C ±5°C ; Handling Tool :

Tweezers ; Time : less than 1min .

WIRE BONDING : The recommended wire bond method is thermocompression bonding with 0.7 or 1.0 mil

(0.018 or 0.025mm) gold wire. State Temperature : 220°C to 250°C ; Bond Tip Temperature : 150°C ; Bond Force :

20 to 30 gms depending on size of wire and Bond Tip Temperature.

HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised

during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all

stages of storage, handling, assembly, and testing. The static discharge must less than 300V.

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

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