TC4429CAT 데이터 시트보기 (PDF) - TelCom Semiconductor Inc => Microchip

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TC4429CAT

6A HIGH-SPEED MOSFET DRIVERS

TelCom Semiconductor Inc => Microchip 

6A HIGH-SPEED MOSFET DRIVERS

TC4420

TC4429

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V

Input Voltage ............................................... – 5V to > VDD

Input Current (VIN > VDD) ......................................... 50mA

Power Dissipation, TA ≤ 70°C

PDIP ...............................................................730mW

SOIC ...............................................................470mW

CerDIP ............................................................800mW

5-Pin TO-220 ......................................................1.6W

Package Power Dissipation (TA ≤ 70°C)

5-Pin TO-220 (With Heat Sink) .........................1.60W

Derating Factors (To Ambient)

PDIP ............................................................. 8mW/°C

SOIC ............................................................. 4mW/°C

CerDIP ....................................................... 6.4mW/°C

5-Pin TO-220 .............................................. 12mW/°C

Thermal Impedances (To Case)

5-Pin TO-220 RθJ-C ........................................ 10°C/W

Storage Temperature Range ................ – 65°C to +150°C

Operating Temperature (Chip) .............................. +150°C

Operating Temperature Range (Ambient)

C Version ............................................... 0°C to +70°C

I Version ........................................... – 25°C to +85°C

E Version .......................................... – 40°C to +85°C

M Version ....................................... – 55°C to +125°C

Lead Temperature (Soldering, 10 sec) ................. +300°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operation sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ Max

Input

VIH

VIL

VIN (Max)

Logic 1 High Input Voltage

Logic 0 Low Input Voltage

Input Voltage Range

IIN

Output

Input Current

VOH

High Output Voltage

VOL

Low Output Voltage

RO

Output Resistance, High

RO

Output Resistance, Low

IPK

Peak Output Current

IREV

Latch-Up Protection

Withstand Reverse Current

Switching Time (Note 1)

tR

Rise Time

tF

Fall Time

tD1

Delay Time

tD2

Delay Time

Power Supply

IS

Power Supply Current

VDD

Operating Input Voltage

0V ≤ VIN ≤ VDD

See Figure 1

See Figure 1

IOUT = 10 mA, VDD = 18V

IOUT = 10 mA, VDD = 18V

VDD = 18V (See Figure 5)

Duty Cycle ≤ 2%

t ≤ 300 µs

Figure 1, CL = 2500 pF

Figure 1, CL = 2500 pF

Figure 1

Figure 1

VIN = 3V

VIN = 0V

2.4

1.8

—

—

1.3

0.8

–5

— VDD+0.3

– 10

—

10

VDD – 0.025 —

—

—

—

2.1

—

1.5

—

6

1.5

—

—

0.025

2.8

2.5

—

—

—

25

35

—

25

35

—

55

75

—

55

75

—

0.45

1.5

—

55

150

4.5

—

18

Unit

V

V

V

µA

V

V

Ω

Ω

A

A

nsec

nsec

nsec

nsec

mA

µA

V

4-226

TELCOM SEMICONDUCTOR, INC.

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