TC4426A 데이터 시트보기 (PDF) - TelCom Semiconductor Inc => Microchip
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TC4426A Datasheet PDF : 5 Pages
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TC4426A
TC4427A
TC4428A
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B .. (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless
otherwise specified.
Symbol Parameter
Test Conditions Min
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
– 0V ≤ VIN ≤ VDD
High Output Voltage
Low Output Voltage
Output Resistance
DC Test
DC Test
VDD = 18V, IO = 10mA
IPK
Peak Output Current
IREV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
tR
Rise Time
VDD = 18V
Duty Cycle ≤ 2%
t ≤ 300µsec
Figure 1
tF
Fall Time
Figure 1
tD1
Delay Time
Figure 1
tD2
Delay Time
Figure 1
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
NOTE: 1. Switching times are guaranteed by design.
TA = 25°C
– 40°C ≤ TA ≤ 85°C
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40° ≤ TA ≤ 85°C
VDD = 18V
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
VDD = 18V
Typ
2.4
—
–1
– 10
VDD – 0.025
—
—
—
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
—
—
—
7
7
8
1.5
—
25
27
29
25
27
29
30
33
35
30
33
35
1.0
0.1
Unit
—
0.8
1
10
—
0.025
9
10
11
—
—
35
40
40
35
40
40
35
40
45
35
40
45
2.0
0.2
V
V
µA
V
V
Ω
A
A
nsec
nsec
nsec
nsec
mA
4-252
TELCOM SEMICONDUCTOR, INC.
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