TC4422CAT 데이터 시트보기 (PDF) - Microchip Technology

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TC4422CAT

9A High-Speed MOSFET Drivers

Microchip Technology 

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

Supply Voltage ..................................................... +20V

Input Voltage .................... (VDD + 0.3V) to (GND – 5V)

Input Current (VIN > VDD)................................... 50 mA

Package Power Dissipation (TA ≤ 70°C)

5-Pin TO-220 .................................................... 1.6W

DFN .............................................................. Note 2

PDIP ............................................................ 730 mW

SOIC............................................................ 750 mW

Package Power Dissipation (TA ≤ 25°C)

5-Pin TO-220 (With Heatsink) ........................ 12.5W

Thermal Impedances (To Case)

5-Pin TO-220 RθJ-C ...................................... 10°C/W

TC4421/TC4422

† Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

Parameters

Sym

Min

Typ Max Units

Conditions

Input

Logic ‘1’, High Input Voltage

VIH

Logic ‘0’, Low Input Voltage

VIL

Input Current

IIN

Output

2.4

1.8 —

V

—

1.3 0.8 V

–10

—

+10 µA 0V ≤ VIN ≤ VDD

High Output Voltage

Low Output Voltage

Output Resistance, High

Output Resistance, Low

Peak Output Current

Continuous Output Current

VOH VDD – 0.025 —

VOL

—

—

ROH

—

1.4

ROL

—

0.9

IPK

—

9.0

IDC

2

—

—

0.025

—

1.7

—

—

V DC TEST

V DC TEST

Ω IOUT = 10 mA, VDD = 18V

Ω IOUT = 10 mA, VDD = 18V

A VDD = 18V

A 10V ≤ VDD ≤ 18V, TA = +25°C

(TC4421/TC4422 CAT only) (Note 3)

Latch-Up Protection

IREV

Withstand Reverse Current

—

>1.5 —

A Duty cycle ≤ 2%, t ≤ 300 µsec

Switching Time (Note 1)

Rise Time

Fall Time

Delay Time

Delay Time

Power Supply

tR

—

60

75

ns Figure 4-1, CL = 10,000 pF

tF

—

60

75

ns Figure 4-1, CL = 10,000 pF

tD1

—

30 60 ns Figure 4-1

tD2

—

33 60 ns Figure 4-1

Power Supply Current

IS

—

—

Operating Input Voltage

VDD

4.5

Note 1: Switching times ensured by design.

0.2 1.5 mA VIN = 3V

55 150 µA VIN = 0V

—

18

V

2: Package power dissipation is dependent on the copper pad area on the PCB.

3: Tested during characterization, not production tested.

 2004 Microchip Technology Inc.

DS21420D-page 3

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