TC913A 데이터 시트보기 (PDF) - Microchip Technology

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TC913A

Dual Auto-Zeroed Operational Amplifiers

Microchip Technology 

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Total Supply Voltage (VDD to VSS) ....................... +18V

Input Voltage ...................... (VDD +0.3V) to (VSS -0.3V)

Current Into Any Pin........................................... 10 mA

While Operating ......................................... 100 μA

Package Power Dissipation (TA – 70°C)

Plastic DIP ............................................... 730 mW

Plastic SOIC ............................................ 470 mW

Operating Temperature Range

C Device .......................................... 0°C to +70°C

Storage Temperature Range.............. -65°C to +150°C

TC913A/TC913B

*Stresses above those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

TC913A AND TC913B ELECTRICAL SPECIFICATIONS

Electrical Characteristics: VS = ±5V, TA = +25°C, unless otherwise indicated.

TC913A

TC913B

Symbol Parameter

Min

Typ

VOS Input Offset

—

5

Voltage

TCVOS Average Temp.

—

0.05

Coefficient of

—

0.05

Input Offset

Voltage

IB Average Input

—

—

Bias Current

—

—

—

—

IOS Average Input

—

5

Offset Current

—

—

eN Input Voltage

—

0.6

Noise

—

11

CMRR Common Mode 110

116

Rejection Ratio

CMVR Common Mode

VSS

—

Voltage Range

AOL Open-Loop

115

120

Voltage Gain

VOUT Output Voltage VSS + 0.3

—

Swing

BW Closed Loop

—

1.5

Bandwidth

SR Slew Rate

—

2.5

PSRR Power Supply

110

—

Rejection Ratio

VS Operating

±3.5

—

Supply Voltage

7.0

—

Range

IS Quiescent

—

0.65

Supply Current

Note 1: Characterized; not 100% tested.

Max

Min

15

—

0.15

—

0.15

—

90

—

3

—

4

—

20

—

1

—

—

—

—

—

—

100

VDD - 2

VSS

—

110

VDD - 0.9 VSS + 0.3

—

—

—

—

—

100

±8.3

±3.5

16

7.0

0.85

—

Typ

Max Unit

Test Conditions

15

30

μV TA = +25°C

0.1

0.25 μV/°C 0°C ≤ TA ≤ +70°C

0.1

0.25 μV/°C -25°C ≤ TA ≤ +85°C

(Note 1)

—

120

pA TA = +25°C

—

4

nA 0°C ≤ TA ≤ +70°C

—

6

nA -25°C ≤ TA ≤ +85°

10

40

pA TA = +25°C

—

1

nA TA = +85°C

0.6

—

μVP-P 0.1 to 1 Hz, RS ≤ 100Ω

11

—

μVP-P 0.1 to 10 Hz, RS ≤ 100Ω

110

—

dB VSS ≤ VCM ≤ VDD - 2.2

—

VDD - 2

V

120

—

dB RL = 10 kΩ, VOUT = ±4V

—

VDD -0.9 V RL = 10 kΩ

1.5

—

MHz Closed Loop Gain = +1

2.5

— V/μsec RL = 10 kΩ, CL = 50 pF

—

—

dB ±3.3V to ±5.5V

—

±8.3

V Split Supply

—

16

V Single Supply

—

1.1

mA VS = ±5V

© 2006 Microchip Technology Inc.

DS21482C-page 3

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