BYD71 데이터 시트보기 (PDF) - Philips Electronics

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BYD71

Ultra fast low-loss controlled avalanche rectifiers

Philips Electronics 

Philips Semiconductors

Ultra fast low-loss

controlled avalanche rectifiers

Product specification

BYD71 series

SYMBOL

PARAMETER

IFRM

repetitive peak forward current

BYD71A to D

BYD71E to G

IFRM

repetitive peak forward current

BYD71A to D

BYD71E to G

IFSM

non-repetitive peak forward current

PRSM

Tstg

Tj

non-repetitive peak reverse power

dissipation

BYD71A to D

BYD71E to G

storage temperature

junction temperature

CONDITIONS

Ttp = 55 °C; see Figs 6 and 7

Tamb = 60 °C; see Figs 8 and 9

t = 10 ms half sine wave;

Tj = Tj max prior to surge;

VR = VRRMmax

t = 20 µs half sine wave; Tj = Tj max

prior to surge

MIN.

−

−

−

−

−

−

−

−65

−65

MAX. UNIT

4.7 A

5.0 A

3.7 A

3.9 A

7A

250 W

150 W

+175 °C

+175 °C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

VF

V(BR)R

IR

forward voltage

BYD71A to D

BYD71E to G

forward voltage

BYD71A to D

BYD71E to G

reverse avalanche breakdown

voltage

BYD71A

BYD71B

BYD71C

BYD71D

BYD71E

BYD71F

BYD71G

reverse current

trr

reverse recovery time

BYD71A to D

BYD71E to G

CONDITIONS

IF = 0.5 A; Tj = Tj max;

see Figs 12 and 13

IF = 0.5 A;

see Figs 12 and 13

IR = 0.1 mA

VR = VRRMmax;

see Fig 14

VR = VRRMmax;

Tj = 165 °C; see Fig 14

when switched from

IF = 0.5 A to IR = 1 A;

measured at IR = 0.25 A

see Fig 18

MIN.

−

−

−

−

55

110

165

220

275

330

440

−

−

−

−

TYP.

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

MAX. UNIT

0.84 V

0.90 V

1.05 V

1.11 V

−V

−V

−V

−V

−V

−V

−V

1 µA

75 µA

25 ns

50 ns

1996 Sep 19

3

Not recommended for new designs

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