TD7626FN 데이터 시트보기 (PDF) - Toshiba

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TD7626FN

TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

TD7626F,TD7626FN

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Supply Voltage 1

Power Dissipation

Operating Temperature

Storage Temperature

VCC1

PD

Topr

Tstg

6.0

V

(Note 1)

mW

−20~85

°C

−55~150

°C

Note 1:

Note 2:

Note 3:

Note 4:

F-type : 540mW, FN-type : 560mW

When using the device at temperatures higher than 25°C, maximum power dissipation decreases for every

1°C as follows : 4.3mW with F-type : 4.5mW with FN-type.

Do not set the port pins (Pins 6, 7, 8, 9, 10, and 11) at or lower than the level of the GND pin.

These devices are easy to be damaged by high static voltage or electric fields.

In regards to this, please handle with care.

RECOMMENDED SUPPLY VOLTAGE

PIN

No.

PIN NAME

MIN TYP. MAX UNIT

12

VCC

4.5

5.0

5.5

V

2001-03-01 5/14

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