TDA6106 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
TDA6106 Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
Video output amplifier
Product specification
TDA6106Q
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see “Handling MOS Devices” ).
QUALITY SPECIFICATION
Quality specification “SNW-FQ-611 part E” is applicable, except for ESD Human body model see Chapter “Limiting
values”, and can be found in the “Quality reference handbook” (ordering number 9397 750 00192).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER(1)
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
Note
1. External heatsink not required.
VALUE
56
12
UNIT
K/W
K/W
CHARACTERISTICS
Operating range: Tamb = −20 to +65 °C; VDD = 180 to 210 V (see note 1), Vom = 1.4 to 6 V.
Test conditions: Tamb = 25 °C; VDD = 200 V; Vom = 4 V; CL = 10 pF (CL consists of parasitic and cathode capacitance);
measured in test circuit of Fig.5; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IDD
Ibias
Vint
Iom(os)
∆VTint
quiescent voltage supply current
input bias current (pin 3)
internal reference voltage input stage
offset current of black current
measurement output
temperature drift of internal
reference voltage input stage
VocDC = 100 V
VocDC = 100 V
VocDC = 100 V
Ioc = 0 µA;
Vin = 1.5 to +3.5 V;
Vom = 1.4 to 6 V
VocDC = 100 V
∆-∆----II-o-o--m-c--
Iof(max)
Voc(min)
Voc(max)
GB
BWS
BWL
linearity of current transfer
maximum peak output current (pin 9)
minimum output voltage (pin 8)
maximum output voltage (pin 8)
gain bandwidth product of open-loop
gain Vos/Vi, dm
small signal bandwidth
large signal bandwidth
Ioc = −10 µA to 3 mA;
Vin = 1.5 to +3.5 V;
Vom = 1.4 to 6 V
Voc = 20 V to VDD −30 V
Vin = 3.5 V
Vin = 1.5 V
f = 500 kHz;
VocDC = 100 V
VocAC = 60 V (p-p);
VocDC = 100 V
VocAC = 100 V (p-p);
VocDC = 100 V
MIN.
2.8
0
−
−10
TYP.
3.0
−
2.5
0
MAX. UNIT
3.3 mA
20
µA
−
V
+10 µA
−
0.5
−
mV/K
0.9
1.0
1.1
−
−
VDD − 14
−
25
−
7
12
VDD − 10 −
0.52
−
5
6
−
4.7
5.7
−
mA
V
V
GHz
MHz
MHz
1997 Mar 03
4
Share Link: 