Philips Semiconductors
Supply circuit with power-down for
telephone set peripherals
Product specification
TEA1081
CHARACTERISTICS
VLN = 4 V; VLN(rms) = 100 mV; IO = 5 mA; f = 300 to 3400 Hz; RL = 100 kΩ; CL = 2.2 µF; RV = 75 kΩ; Tamb = 25 °C;
unless otherwise specified; see Fig.6.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VLN
VLNmin
VLNmax
operating DC line voltage
minimum instantaneous line voltage
maximum instantaneous line voltage
2.5 −
−
−
12.0 −
12.0 V
1.4 V
−
V
Characteristics with RV = 75 kΩ connected between pins 6 and 7 and CL = 10 µF
I1
input current (pin 1)
VLN(rms) = 0 V
−
5.8 −
mA
VLN(rms) = 1.5 V; IO = 15 mA
−
30 −
mA
VO
output voltage (pin 7)
−
3.0 −
V
∆VO
variation of output voltage over the
ranges of:
line voltage
temperature
temperature
output current
I6
control current (pin 6)
VLN = 4 to 6 V
Tamb = +25 to −25 °C
Tamb = +25 to +75 °C
IO = 5 to 20 mA
−
100 −
mV
−
−100 −
mV
−
−100 −
mV
−
−100 −
mV
−
20 −
µA
Characteristics without RV
I1
input current (pin 1)
∆VLN-O voltage drop from line to output
IO
output current (pin 7)
TEA1081
VLN(rms) = 0 V
−
VLN(rms) = 1.5 V; IO = 15 mA
−
IO = 0 mA
−
IO = 15 mA; VLN(rms) = 1.5 V
−
−
6.0 −
mA
31 −
mA
0.5 −
V
1.1 −
V
−
30 mA
TEA1081T
RS
internal series resistance
IINT
internal supply current
THD
BRL
total harmonic distortion
balance return loss
−
−
IO = 0 mA; PD = LOW; VSP = VO −
IO = 0 mA; PD = HIGH (note 1); −
VSP > 2 V
VLN(rms) = 1.5 V
−
600 Ω reference
25
−
20 mA
20 −
Ω
0.8 1.4 mA
40 60 µA
−
2
%
−
−
dB
VLN(2H)
VLN(3H)
Vni(rms)
second harmonic level of line voltage
third harmonic level of line voltage
noise voltage on input terminal
(RMS value)
f = 500 Hz; VLN = 0 dBm;
Zline = 600 Ω
f = 500 Hz; VLN = 0 dBm;
Zline = 600 Ω
VLN(rms) = 0 V; RL = 600 Ω;
P53 curve
−
−58 −
dBm
−
−60 −
dBm
−
−83 −
dBmp
Power-down input (pin 4)
VIL
LOW level input voltage
VIH
HIGH level input voltage
I4
input current
−
−
1.5 −
−
−
0.3 V
VSP V
10 µA
September 1994
7