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TGA4953-SL(2007) 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA4953-SL
(Rev.:2007)
TriQuint
TriQuint Semiconductor TriQuint
TGA4953-SL Datasheet PDF : 19 Pages
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Product Datasheet
May 9, 2007
TGA4953-SL
TABLE I
MAXIMUM RATINGS
Symbol
Parameter
VD1 VD2T Drain Voltage
VG1 VG2 Gate Voltage Range
VCTRL1
VCTRL2
Control Voltage Range
ID1
ID2T
| IG1 |
| IG2 |
Drain Supply Current (Quiescent)
Gate Supply Current
| ICTRL1 | Control Supply Current
| ICTRL2 |
PIN Input Continuous Wave Power
VIN 12.5Gb/s PRBS Input Voltage
PD Power Dissipation
TCH Operating Channel Temperature
TM Mounting Temperature
(10 Seconds)
TSTG Storage Temperature
Value
8V
-3V to 0V
-3V to VD
200 mA
350 mA
15 mA
15 mA
23 dBm
4 VPP
4W
150 0C
230 0C
-65 to 150 0C
Notes
1/ 2/
1/
1/
1/ 2/
1/
1/ 5/
1/ 2/
1/ 2/
1/ 2/ 3/
4/
1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD at a package base temperature of 80°C
3/ When operated at this bias condition with a baseplate temperature of 80°C, the MTTF
is reduced
4/ Junction operating temperature will directly affect the device median time to failure
(MTTF). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
5/ Assure VCTRL1 never exceeds VD1, and VCTRL2 never exceeds VD2T during bias up and
down sequences.
TriQuint Semiconductor Texas : (972)994-8465 Fax (972)994-8504 Web: www.triquint.com
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