TGA2505(2006) 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA2505
(Rev.:2006)

13 - 17 GHz 2.5 Watt, 25dB Power Amplifier

TriQuint Semiconductor 

Advance Product Information

April 5, 2006

TABLE I

MAXIMUM RATINGS

TGA2505

Symbol

V+

V-

I+

| IG |

PIN

PD

TCH

TM

TSTG

Parameter 1/

Positive Supply Voltage

Negative Supply Voltage Range

Positive Supply Current (Quiescent)

Gate Supply Current

Input Continuous Wave Power

Power Dissipation

Operating Channel Temperature

Mounting Temperature

(30 Seconds)

Storage Temperature

Value

8V

-5V to 0V

1300 mA

18 mA

24 dBm

6.43 W

150 0C

320 0C

-65 to 150 0C

Notes

2/

2/

2/

2/ 3/

4/ 5/

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power

shall not exceed PD.

3/ When operated at this bias condition with a base plate temperature of 70°C, the

median life is reduced from 8.9E+6 to 1E+6.

4/ These ratings apply to each individual FET.

5/ Junction operating temperature will directly affect the device median time to

failure (TM). For maximum life, it is recommended that junction temperatures be

maintained at the lowest possible levels.

TABLE II

DC PROBE TEST

(TA = 25 °C, Nominal)

NOTES SYMBOL

1/

IDSS

1/

GM

2/

|VP|

2/

|VBVGS|

2/

|VBVGD|

LIMITS

MIN

MAX

80

381

175

425

0.5

1.5

8

30

13

30

UNITS

mA

mS

V

V

V

1/ Measurements are performed on a 800µm FET.

2/ VP, VBVGD, and VBVGS are negative.

TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com

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