TGA4541-SM(2012) 데이터 시트보기 (PDF) - TriQuint Semiconductor
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TGA4541-SM Datasheet PDF : 14 Pages
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TGA4541-SM
Ka-Band Variable Gain Driver Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Drain Voltage,Vd
Drain Current, Id1
Drain Current, Id2+Id3
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,T = 25ºC
Channel Temperature, Tch
Mounting Temperature (30 Seconds)
Storage Temperature
Rating
+6 V
96 mA
672 mA
4.0 W
+20 dBm
200 oC
260 oC
-40 to 150 oC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Parameter
Vd
Id1
Id2+Id3
Vg
Min Typical Max Units
5
V
60
mA
270
mA
-0.7
V
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vd = 5 V, Id = 330 mA (Id1 = 60 mA, Id2+Id3 = 270 mA), Vc = -1.00 V, Vg = -0.7 V
typical. Id2+Id3 are held constant throughout the test.
Parameter
Operational Frequency Range
Gain
Attenuation Range
Input Return Loss
Output Return Loss
Output Power @ 1dB Gain Compression (max
gain)
Output TOI
Gain Temperature Coefficient (max gain)
Power Temperature Coefficient (max gain)
Min
28
Typical
33
30
18
17
23
31
-0.08
-0.008
Max
31
Units
GHz
dB
dB
dB
dB
dBm
dBm
dB/°C
dB/°C
Preliminary Data Sheet: Rev- 05/08/12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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