TGA4541-SM(2012) 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA4541-SM
(Rev.:2012)

Ka-Band Variable Gain Driver Amplifier

TriQuint Semiconductor 

TGA4541-SM

Ka-Band Variable Gain Driver Amplifier

Specifications (cont.)

Thermal and Reliability Information

Parameter

Thermal Resistance, θJC, measured to back of package

Channel Temperature (Tch), and Median Lifetime

(Tm)

Channel Temperature (Tch), and Median Lifetime

(Tm) Under RF Drive

Condition

Tbase = 85 °C

Tbase = 85 °C, Vd = 5 V, Id = 330

mA, Pdiss = 1.65 W

Tbase = 85 °C, Vd = 5 V, Id = 330

mA, Pout = 24 dBm, Pdiss = 1.40 W

Rating

θJC = 34.5 °C/W

Tch = 142 °C

Tm = 2.8 E+6 Hours

Tch = 133 °C

Tm = 7.9 E+6 Hours

1E+15

Median Lifetime (Tm) vs. Channel Temperature (Tch)

1E+14

1E+13

1E+12

1E+11

1E+10

1E+09

1E+08

1E+07

1E+06

1E+05

FET5

1E+04

25

50

75

100

125

150

175

200

Channel Temperature, Tch (°C)

Preliminary Data Sheet: Rev- 05/08/12

© 2012 TriQuint Semiconductor, Inc.

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Disclaimer: Subject to change without notice

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