THBT15011 데이터 시트보기 (PDF) - STMicroelectronics
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THBT15011 Datasheet PDF : 11 Pages
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THBT15011, THBT20011, THBT27011
Characteristics
Table 3.
Symbol
Electrical characteristics (Tamb = 25 °C)
Parameter
VRM Stand-off voltage
IRM Leakage current at stand-off voltage
VR Continuos reverse voltage
VBR Breakdown voltage
VBO Breakover voltage
IH Holding current
IBO Breakover current
VF Forward voltage drop
IPP Peak pulse current
C Capacitance
I
IPP
IBO
IH
IR
V
VRM VBR VBO
Table 4. Static parameters
IRM @ VRM
Order code
max.
IR(1) @ VR
max.
VBO(2) @ IBO
max. min. max.
IH(3)
min.
C(4)
max.
µA
V
µA
V
V
V
mA
mA
pF
THBT15011D
5
135
50
150
210
50
400
150
80
THBT20011D
5
180
50
200
290
50
400
150
80
THBT27011D
5
240
50
270
380
50
400
150
80
1. IR measured at VR guarantee VBR min ≥ VR
2. Measured at 50 Hz (1 cycle) - See Figure 4: Test circuit 1 for IBO and VBO parameters.
3. See Figure 5: Test circuit 2 for dynamic IH parameter.
4. VR = 1 V, F = 1 MHz.
Table 5. Dynamic breakover voltages (transversal mode)
Type
Symbol
Test conditions(1)
Max Unit
THBT15011D
VBO
10/700 µs
1.2/50 µs
2/10μs
1.5 kV
1.5 kV
2.5 kV
Rp = 10 Ω
IPP = 30 A
190
Rp = 10 Ω
IPP = 30 A
190
V
Rp = 62 Ω
IPP = 38 A
200
THBT20011D
VBO
10/700 µs
1.2/50 µs
2/10 µs
1.5 kV
1.5 kV
2.5 kV
Rp = 10 Ω
IPP = 30 A
270
Rp = 10 Ω
IPP = 30 A
270
V
Rp = 62 Ω
IPP = 38 A
280
THBT27011D
VBO
10/700 µs
1.2/50 µs
2/10 µs
1.5 kV
1.5 kV
2.5 kV
Rp = 10 Ω
IPP = 30 A
360
Rp = 10 Ω
IPP = 30 A
360
V
Rp = 62 Ω
IPP = 38 A
400
1. See Figure 6: Test circuit 3 for VBO parameters. Rp is the protection resistor located on the line card.
Doc ID 3767 Rev 9
3/11
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