1416-100 데이터 시트보기 (PDF) - GHz Technology
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1416-100 Datasheet PDF : 3 Pages
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1416 - 100
100 Watts - 50 Volts, Pulsed
Radar 1400 - 1600 MHz
GENERAL DESCRIPTION
The 1416-100 is an internally matched, COMMON BASE transistor capable
of providing 100 Watts of pulsed RF output power at one microsecond pulse
width, ten percent duty factor across the band 1400-1600 MHz. This
hermetically solder-sealed transistor is specifically designed for short pulse
radar applications. It utilizes gold metalization and diffused emitter ballasting
to provide high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
564 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
55 Volts
4.0 Volts
10 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55AW, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1400-1600 MHz
100
Watts
Vcc = 50 Volts
20 Watts
Pulse Width =1.0 µs
6.5 7.0
dB
Duty = 10%
40
%
F=1600MHz, Po=100W
10:1
BVces
BVebo
BVcbo
Hfe
θjc
Collector to Emitter Breakdown Ic = 10 mA
55
Emitter to Base Breakdown
Ie = 10 mA
3.0
Emitter to Base Breakdown
Ic = 10 mA
65
DC Current Gain
Vce = 5 V, Ic = 100mA 5.0
Thermal Resistance
Rated Pulse Condition
Issue August 1996
Volts
Volts
Volts
0.31 oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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