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MOC8100SVM 데이터 시트보기 (PDF) - Fairchild Semiconductor

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MOC8100SVM
Fairchild
Fairchild Semiconductor Fairchild
MOC8100SVM Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Device
Value
Units
TOTAL DEVICE
TSTG
TOPR
TSOL
PD
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
All
-40 to +150
°C
All
-40 to +100
°C
All
260 for 10 sec
°C
All
250
mW
2.94
mW/°C
IF
DC/Average Forward Input Current
VR Reverse Input Voltage
All
60
mA
TIL111M
3
V
MOC8100M, TIL117M
6
IF(pk) Forward Current – Peak (300µs, 2% Duty Cycle)
All
PD LED Power Dissipation @ TA = 25 °C
All
Derate above 25°C
3
A
120
mW
1.41
mW/°C
DETECTOR
VCEO
VCBO
VECO
VEBO
PD
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Emitter-Base Voltage
Detector Power Dissipation @ TA = 25 °C
Derate above 25°C
All
All
TIL111M, TIL117M
All
All
30
V
70
V
7
V
7
150
mW
1.76
mW/°C
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
2
www.fairchildsemi.com

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