MOC8100FM 데이터 시트보기 (PDF) - Fairchild Semiconductor
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MOC8100FM Datasheet PDF : 11 Pages
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Electrical Characteristics (TA = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
EMITTER
VF
Input Forward Voltage
IF = 16mA
TA = 25°C
TIL111M
IF = 10mA for
MOC8100M,
IF = 16mA; for
TIL117M
TA = 0°C–70°C
TA = -55°C
TA = +100°C
MOC8100M,
TIL117M
1.2 1.4 V
1.2 1.4
1.32
1.10
IR
Reverse Leakage Current VR = 3.0V
VR = 6.0V
DETECTOR
TIL111M, TIL117M
MOC8100M
0.001 10 µA
0.001 10 µA
BVCEO Collector-Emitter
Breakdown Voltage
IC = 1.0mA, IF = 0
All
30 100
V
BVCBO Collector-Base
Breakdown Voltage
IC = 10µA, IF = 0
All
70 120
V
BVEBO Emitter-Base Breakdown IE = 10µA, IF = 0
Voltage
All
7 10
V
BVECO Emitter-Collector
Breakdown Voltage
IF = 100µA, IF = 0
TIL111M, TIL117M 7 10
V
ICEO
Collector-Emitter Dark
Current
VCE = 10V, IF = 0
VCE = 5V, TA = 25°C
VCE = 30V, IF = 0, TA = 70°C
TIL111M, TIL117M
MOC8100M
TIL117M,
MOC8100M
1 50 nA
0.5 25 nA
0.2 50 µA
ICBO
ICBO
Collector-Base Dark
Current
CCE Capacitance
*All Typical values at TA = 25°C
VCB = 10V
VCB = 5V
VCE = 0V, f = 1MHz
TIL111M, TIL117M
MOC8100M
All
20 nA
10 nA
8
pF
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
3
www.fairchildsemi.com
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