TIC106N 데이터 시트보기 (PDF) - Comset Semiconductors
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TIC106N Datasheet PDF : 3 Pages
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SEMICONDUCTORS
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
THERMAL CHARACTERISTICS
Symbol
tgt
tq
R∂JC
R∂JA
Gate-controlled
Turn-on time
Circuit-communicated
Turn-off time
Ratings
VAA = 30 V, RL = 6 Ω, RGK(eff) = 5 kΩ,
Vin = 50 V
VAA = 30 V, RL = 6 Ω, IRM ≈ 8 A
Value
1.75
7.7
≤ 3.5
≤ 62.5
Unit
µs
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
IDRM
IRRM
IGT
VGT
IH
VTM
dv/dt
Repetitive peak off-state current
Repetitive peak reverse current
Gate trigger current
Gate trigger voltage
Holding current
Peak on-state voltage
Critical rate of rise of off-state
voltage
VD = Rated VDRM, RGK = 1 kΩ,
TC = 110°C
-
- 400 µA
VR = Rated VRRM, IG = 0,
TC = 110°C
- - 1 mA
VAA = 6 V, RL = 100 Ω,
tp(g) ≥ 20µs
- 60 200 µA
VAA = 6 V, RL = 100 Ω,
RGK = 1 kΩ, tp(g) ≥ 20µs,
- - 1.2
TC = -40°C
VAA = 6 V, RL = 100 Ω,
RGK = 1 kΩ, tp(g) ≥ 20µs,
0.4 0.6 1
V
VAA = 6 V, RL = 100 Ω,
RGK = 1 kΩ, tp(g) ≥ 20µs,
0.2 - -
TC = 110°C
VAA = 6 V, RGK = 1 kΩ,
initiating IT = 10 mA
-
VAA = 6 V, RGK = 1 kΩ,
initiating IT = 10 mA,
-
TC = -40°C
ITM = 5A (see Note6)
-
-5
mA
-8
- 1.7 V
VD = Rated VD, RGK = 1 kΩ,
TC = 110°C
- 10 - V/µs
Note 6:
This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %, voltage-sensing
contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body.
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