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TK12A60D 데이터 시트보기 (PDF) - Toshiba
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TK12A60D
Silicon N Channel MOS Type (π -MOSⅦ ) Field Effect Transistor
Toshiba
TK12A60D Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
10
Common source
10
7
Tc
=
25°C
6.5
Pulse Test
8
8
6.3
6
6
4
5.6
2
VGS
=
5.4 V
0
0
2
4
6
8
10
Drain-source voltage VDS (V)
TK12A60D
I
D
– V
DS
20
10 7.5
Common source
7 Tc
=
25°C
8
Pulse Test
16
6.7
12
6.5
8
6
4
VGS
=
5.6 V
0
0
10
20
30
40
50
Drain-source voltage VDS (V)
24
Common source
VDS
=
10 V
Pulse Test
18
I
D
– V
GS
12
100
6
25
Tc
= −
55°C
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
V
DS
– V
GS
10
Common source
Tc
=
25°C
Pulse Test
8
6
ID
=
12 A
4
6
2
3
0
0
4
8
12
16
20
Gate-source voltage VGS (V)
100
Common source
VDS
=
10 V
Pulse Test
|Y
fs
| – I
D
10
Tc
= −
55°C
25
100
1
0.1
0.1
1
10
100
Drain current ID (A)
10
Common source
Tc
=
25°C
Pulse Test
R
DS (ON)
– I
D
1
VGS
=
10 V
0.1
0.1
1
10
100
Drain current ID (A)
3
2010-08-12
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