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TK12A60D 데이터 시트보기 (PDF) - Toshiba
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TK12A60D
Silicon N Channel MOS Type (π -MOSⅦ ) Field Effect Transistor
Toshiba
TK12A60D Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
−
Tc
2
Common source
VGS
=
10 V
Pulse Test
1.6
1.2
12
6
0.8
ID
=
3 A
0.4
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
TK12A60D
100
Common source
Tc
=
25°C
Pulse Test
I
DR
−
V
DS
10
1
0.1
0
10
5
31
VGS
=
0 V
-0.3
-0.6
-0.9
-1.2
-1.5
Drain-source voltage VDS (V)
10000
1000
100
Capacitance – V
DS
Ciss
Coss
10
Common source
VGS
=
0 V
f =1MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
Drain-source voltage VDS (V)
V
th
−
Tc
5
Common source
VDS
=
10 V
ID
=
1mA
4
Pulse Test
3
2
1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
80
60
40
20
0
0
P
D
−
Tc
40
80
120
160
Case temperature Tc (°C)
Dynamic input / output
characteristics
500
20
400
VDS
16
200V
300
VDD
=
100 V
400V
12
200
8
Common source
VGS
ID
=
12 A
100
Tc
=
25°C
Pulse Test
4
0
0
0
10
20
30
40
50
60
Total gate charge Qg (nC)
4
2010-08-12
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