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TK12A60D 데이터 시트보기 (PDF) - Toshiba
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TK12A60D
Silicon N Channel MOS Type (π -MOSⅦ ) Field Effect Transistor
Toshiba
TK12A60D Datasheet PDF : 6 Pages
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TK12A60D
r
th
– t
w
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10
μ
100
μ
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
2.78°C/W
1m
10m
100m
1
10
Pulse width t
w
(s)
SAFE OPERATING AREA
100
ID max (pulse)
*
ID max (continuous)
10
100
μ
s
*
1 ms
*
1
DC operation
Tc
=
25°C
0.1
0.01
*
Single pulse Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
VDSS max
100
Drain-source voltage V
DS
(V)
1000
E
AS
– T
ch
500
400
300
200
100
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
RG
=
25
Ω
V
DD
=
90 V, L
=
4.36 mH
Wave form
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2010-08-12
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