LH5116H-10 데이터 시트보기 (PDF) - Sharp Electronics
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LH5116H-10 Datasheet PDF : 10 Pages
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LH5116/H
CMOS 16K (2K × 8) Static RAM
(2) WRITE CYCLE 1 (VCC = 5 V ±10%)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Write cycle time
tWC
100
ns
Chip enable to end of write
tCW
80
ns
Address valid time
tAW
80
ns
Address setup time
tAS
0
ns
Write pulse width
tWP
60
ns
Write recovery time
tWR
10
ns
Output active from end of write
tOW
10
ns
WE Low to output in High-Z
tWHZ
0
30
ns
Data valid to end of write
tDW
30
ns
Data hold time
tDH
10
ns
Output enable to output in High-Z
tOHZ
0
40
ns
Output active from end of write
tOW
10
ns
NOTES:
1. TA = 0 to +70°C (LH5116/D/NA), TA = -40 to +85°C (LH5116H/HD/HN)
2. Active output to high-impedance and high-impedance to output active tests specified for a ±200 mV transition
from steady state levels into the test load.
NOTE
2
2
2
2
AC TEST CONDITIONS
PARAMETER
MODE
Input voltage amplitude
0.8 V to 2.2 V
Input rise/fall time
10 ns
Timing reference level
1.5 V
Output load condition
1TTL + CL (100 pF)
NOTE:
1. Includes scope and jig capacitance.
NOTE
1
DATA RETENTION CHARACTERISTICS 1
PARAMETER
SYMBOL
CONDITIONS
MIN.
Data retention voltage VCCDR
CE ≥ VCCRC - 0.2 V
2.0
Data retention current ICCDR
CE ≥ VCCDR - 0.2 V,
VCCDR = 2.0 V
Chip disable to data
retention
tCDR
0
Recovery time
tR
tRC
NOTES:
1. TA = 0 to +70°C (LH5116/D/NA), TA = -40 to +85°C (LH5116H/HD/HN)
2. TA = 25°C
3. tRC = Read cycle time
CAPACITANCE 1 (f = 1 MHz, TA = 25°C)
PARAMETER
SYMBOL
CONDITIONS
MIN.
Input capacitance
CIN
VIN = 0 V
Input/output capacitance
CI/O
VI/O = 0 V
NOTE:
1. This parameter is sampled and not production tested.
TYP.
MAX.
UNIT
5.5
V
1.0
µA
0.2
ns
ns
TYP.
MAX.
UNIT
7
pF
10
pF
NOTE
2
3
4
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