LH52256C 데이터 시트보기 (PDF) - Sharp Electronics

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LH52256C

CMOS 256K (32K × 8) Static RAM

Sharp Electronics 

CMOS 256K (32K × 8) Static RAM

LH52256C/CH

tWC

ADDRESS

OE

CE

WE

DOUT

tAS

(NOTE 3)

tAW

tCW

(NOTE 2)

tWP

(NOTE 1)

(NOTE 6)

tOHZ

tDW

tWR

(NOTE 4)

tWR

(NOTE 4)

tDH

(NOTE 5)

DIN

DATA VALID

NOTES:

1. A write occurs during the overlap of a LOW CE, and a LOW WE.

A write begins at the latest transition among CE going LOW, and

WE going LOW. A write ends at the earliest transition among CE

going HIGH, and WE going HIGH. tWP is measured from the beginning

of write to the end of write.

2. tCW is measured from the later of CE going LOW to the end of write.

3. tAS is measured from the address valid to the beginning of write.

4. tWR is measured from the end of write to the address change.

5. During this period, I/O pins are in the output state, therefore the input

signals of opposite phase to the outputs must not be applied.

6. If CE goes LOW simultaneously with WE going LOW or after WE going

LOW, the outputs remain in high impedance state.

7. If CE goes HIGH simulaneously with WE going HIGH or before WE

going HIGH, the outputs remain in high impedance state.

Figure 5. Write Cycle (OE Controlled)

52256C-4

7

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