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TLN105B 데이터 시트보기 (PDF) - Toshiba

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TLN105B Datasheet PDF : 6 Pages
1 2 3 4 5 6
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN105B(F)
TLN105B(F)
Lead(Pb)-Free
RemoteControl Systems
OptoElectronic Switches
Unit: mm
High radiant intensity: IE = 20mW / sr (typ.)
Wide halfangle value: θ1/2 = ±23.5° (typ.)
Excellent radiantintensity linearity. Modulation by pulse operation
and high frequency is possible.
TPS703(F) PIN photodiode with filter to screen out visible light
available as detector for remote control
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating
(Ta > 25°C)
Pulse forward current
(Note)
IF
ΔIF / °C
IFP
100
1.33
1
mA
mA / °C
A
Reverse voltage
VR
5
V
TOSHIBA
46B5
Power dissipation
PD
150
mW
Weight: 0.3 g (typ.)
Operating temperature
Topr
20~75
°C
Storage temperature
Tstg
30~100
°C
Note: Using continuously under heavy loads (e.g. the application of high
Pin Connection
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
1
2
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
1. Anode
2. Cathode
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
(Note): Pulse width 100μs, repetitive frequency = 100 Hz
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Radiant intensity
Radiant power
Capacitance
Peak emission wavelength
Spectral line half width
Half value angle
Symbol
VF
IR
IE
PO
CT
λP
Δλ
θ1
2
Test Condition
IF = 100 mA
VR = 5 V
IF = 50 mA
IF = 50 mA
VR = 0, f = 1 MHz
IF = 50 mA
IF = 50 mA
IF = 50 mA
Min Typ. Max Unit
1.35 1.5
V
10
μA
12
20
mW / sr
11
mW
20
pF
950
nm
50
nm
±23.5
°
1
2007-10-01

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