DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TLP371(2002) 데이터 시트보기 (PDF) - Toshiba

부품명
상세내역
제조사
TLP371 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Collector-emitter
breakdown voltage
Emitter-collector
breakdown voltage
Collector-base
breakdown voltage (TLP371)
Emitter-base
breakdown voltage (TLP371)
Collector dark current
Collector dark current (TLP371)
Collector dark current (TLP371)
DC forward current gain (TLP371)
Capacitance (collecter to emitter)
Symbol
VF
IR
CT
V(BR) CEO
V(BR) ECO
V(BR) CBO
V(BR) EBO
ICEO
ICER
ICBO
hFE
CCE
Test Condition
IF = 10 mA
VR = 5 V
V = 0, f = 1 MHz
IC = 0.1 mA
IE = 0.1 mA
IC = 0.1 mA
IE = 0.1 mA
VCE = 200 V
VCE = 200 V
Ta = 85 °C
VCE = 200 V
Ta = 85 °C,
RBE = 10 M
VCE = 200 V
VCE = 5 V,
IC = 10 mA
V = 0, f = 1 MHz
TLP371,TLP372
Min Typ. Max Unit
1.0 1.15 1.3
V
10
µA
30
pF
300
V
0.3
V
300
V
7
V
10 200 nA
20
µA
0.5
10
µA
0.1
nA
7000
10
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo-current (TLP371)
Collector-emitter
saturation voltage
Symbol
Test Condition
IC / IF
IC / IF (sat)
IPB
VCE (sat)
IF = 1 mA, VCE = 1 V
IF = 10 mA, VCE = 1 V
IF = 1 mA, VCB = 1 V
IC = 10 mA, IF = 1 mA
IC = 100 mA, IF = 10 mA
MIn Typ. Max Unit
1000 4000
%
500
%
6
µA
1.0
V
0.3
1.2
3
2002-09-25

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]