TLP284-4(2009) 데이터 시트보기 (PDF) - Toshiba

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TLP284-4
(Rev.:2009)

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

Individual Electrical Characteristics (Ta = 25°C)

TLP284−4

Characteristic

Symbol

Test Condition

Min Typ Max Unit

Forward voltage

VF

IF = ±10 mA

1.0 1.15 1.3

V

Capacitance

CT

V = 0, f = 1 MHz

―

60

—

pF

Collector−emitter

breakdown voltage

V(BR) CEO IC = 0.5 mA

80

―

—

V

Emitter−collector

breakdown voltage

Collector dark current

Capacitance

(collector to emitter)

V(BR) ECO IE = 0.1 mA

7

―

—

V

(Note 5)

ICEO

VCE = 48 V,

Ambient light below

(100 ℓx )

―

(Note4)

0.01 0.1

(2) (10)

μA

VCE = 48 V, Ta = 85°C

Ambient light below

(100 ℓx )

―

(Note4)

2

(4)

50

(50)

μA

CCE

V = 0, f = 1 MHz

―

10

―

pF

Note.4: Irradiation to marking side using standard light bulb.

Note 5: Because of the construction, leak current might be increased by ambient light.

Please use photocoupler with less ambient light.

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Current transfer ratio

Saturated CTR

Collector−emitter

saturation voltage

Off−state collector current

CTR symmetry

Symbol

Test Condition

MIn Typ. Max Unit

IC / IF

IF = ±5 mA, VCE = 5 V

50

— 600

%

Rank GB 100

—

600

IC / IF (sat) IF = ±1 mA, VCE = 0.4 V

—

60

—

%

Rank GB 30

—

—

IC = 2.4 mA, IF = ±8 mA

—

—

0.4

VCE (sat) IC = 0.2 mA, IF = ±1 mA

—

0.2

—

V

Rank GB —

—

0.4

IC(off)

VF = ± 0.7 V, VCE = 48 V

—

—

10

μA

IC (ratio)

IC (IF = −5 mA) / IC (IF = 5 mA)

(Note 6)

0.33

—

3

—

Note 6:

IC(ratio)

= IC2 (IF

IC1(IF

= IF2, VCE = 5V)

= IF1, VCE = 5V)

IF1

IF2

IC1

VCE

IC2

3

2009-06-05

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