TLP521 데이터 시트보기 (PDF) - Unspecified
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TLP521 Datasheet PDF : 3 Pages
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ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BVECO
Power Dissipation
55V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V )
F
1.0 1.15 1.3 V
Reverse Current (IR)
10 µA
Output
Collector-emitter Breakdown (BVCEO) 55
( Note 2 )
Emitter-collector Breakdown (BV ) 6
ECO
Collector-emitter Dark Current (ICEO)
V
V
100 nA
Coupled
Current Transfer Ratio (CTR) (Note 2)
TLP521, TLP521-2, TLP521-4
50
CTR selection available BL
200
GB
100
GB
30
600 %
600 %
600 %
%
Collector-emitter Saturation VoltageV
CE (SAT)
-GB
0.4 V
0.4 V
Input to Output Isolation Voltage V
5300
V
ISO
RMS
7500
VPK
Input-output Isolation Resistance RISO 5x1010
Ω
Response Time (Rise), tr
4
µs
Response Time (Fall), tf
3
µs
I = 10mA
F
VR = 4V
IC = 0.5mA
I
E
=
100µA
VCE = 20V
5mA IF , 5V VCE
1mA IF , 0.4V VCE
8mA I , 2.4mA I
F
C
1mA IF , 0.2mA IC
See note 1
See note 1
VIO = 500V (note 1)
V = 2V ,
CE
IC = 2mA, RL = 100Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/4/03
DB92546m-AAS/A3
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