TMG10C80
Gate Characteristics
100
10
VGM(10V)
PGM(5W)
1
0.1
10
PG(AV() 0.5W)
25℃
1+
GT1
1−
GT1
1−
GT3
VG(D 0.2V)
100
1000
Gate Curren(t mA)
RMS On-State Current vs
Maximum Power Dissipation
14
10000
12
10
8
6
θ
π
0
2π
θ
360゜
θ:Conduction Angle
θ=180゜
θ=150゜
θ=120゜
θ=90゜
θ=60゜
θ=30゜
4
2
0
0 1 2 3 4 5 6 7 8 9 10 11
RMS On-State Curren(t A)
Surge On-State Current Rating
(Non-Repetitive)
120
100
80
60
60HZ
50HZ
40
20
0
1
2
5
10
20
Time(Cycles)
50 100
IGT −T(j Typical)
1000
500
200
100
50
20
10
−50
I+GT1(1+)
I−GT1(1−)
I−GT3(3−)
0
50
100
Junction Temp. T(j ℃)
150
On-State Characteristics(MAX)
200
100
50
20
10
5
2
1
0.5
0.2
0.5
1.0
1.5
2.0 2.5
On-State Voltage(V)
Tj=25℃
Tj=125℃
3.0 3.5
RMS On-State vs
Allowable Case Temperature
125
120
115
110
0
θ
π
2π
105
θ
360゜
θ:Conduction Angle
100
0
2
4
6
8
RMS On-State Curren(t A)
θ=30゜
θ=60゜
θ=90゜
θ=120゜
θ=150゜
θ=180゜
10
Transient Thermal Impedance
10
1
0.1
0.01
0.1
1
10
Time(Sec.)
VGT −T(j Typical)
1000
500
200
100
50
V−GT3(3−)
V+GT1(1+)
V−GT1(1−)
20
10
−50
0
50
100
Junction Temp. T(j ℃)
100
150
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com