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TMG10C80 데이터 시트보기 (PDF) - SanRex Corporation

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TMG10C80
Sanrex
SanRex Corporation Sanrex
TMG10C80 Datasheet PDF : 2 Pages
1 2
TMG10C80
Gate Characteristics
100
10
VGM(10V)
PGM(5W)
0.1
10
PG(AV0.5W)
25℃
1
GT1
1
GT1
1
GT3
VGD 0.2V)
100
1000
Gate Curren(t mA)
RMS On-State Current vs
Maximum Power Dissipation
14
10000
12
10
θ
π
θ
360゜
θ:Conduction Angle
θ=180゜
θ=150゜
θ=120゜
θ=90゜
θ=60゜
θ=30゜
0 1 2 3 4 5 6 7 8 9 10 11
RMS On-State Curren(t A)
Surge On-State Current Rating
(Non-Repetitive)
120
100
80
60
60HZ
50HZ
40
20
10
20
Time(Cycles)
50 100
IGT −T(j Typical)
1000
500
200
100
50
20
10
−50
IGT11
IGT11
IGT33
50
100
Junction Temp. T(j ℃)
150
On-State Characteristics(MAX)
200
100
50
20
10
0.5
0.2
0.5
1.0
1.5
2.0 2.5
On-State Voltage(V)
Tj=25℃
Tj=125℃
3.0 3.5
RMS On-State vs
Allowable Case Temperature
125
120
115
110
θ
π
105
θ
360゜
θ:Conduction Angle
100
RMS On-State Curren(t A)
θ=30゜
θ=60゜
θ=90゜
θ=120゜
θ=150゜
θ=180゜
10
Transient Thermal Impedance
10
0.1
0.01
0.1
10
Time(Sec.)
VGT −T(j Typical)
1000
500
200
100
50
VGT33
VGT11
VGT11
20
10
−50
50
100
Junction Temp. T(j ℃)
100
150
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com

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