TN2529 데이터 시트보기 (PDF) - Supertex Inc
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TN2529 Datasheet PDF : 4 Pages
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TN2529
Low Threshold N-Channel
Enhancement-Mode Vertical DMOS FET
Features
► Low threshold - 2.0V max
► High input impedance
► Low input capacitance - 125pF max
► Fast switching speeds
► Low ON-resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Logic level interfaces – ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic devices
► Analog switches
► General purpose line drivers
► Telecom switches
General Description
The Supertex TN2529 is a low threshold enhancement-
mode transistor that utilizes an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors,
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Switching Waveforms and Test Circuit
10V
INPUT
0V 10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
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