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TN2535N8-G 데이터 시트보기 (PDF) - Supertex Inc

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TN2535N8-G Datasheet PDF : 5 Pages
1 2 3 4 5
TN2535
Thermal Characteristics
Package
ID
(continuous)
(mA)
ID
(pulsed)
(A)
Power Dissipation
@TA = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
(mA)
IDRM
(A)
TO-243AA (SOT-89)
283
1.6
1.6
15
78
283
1.6
Notes:
† ID (continuous) is limited by max rated Tj .
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
350 -
-
V VGS = 0V, ID = 250µA
VGS(th) Gate threshold voltage
1.0 -
2.0
V VGS = VDS, ID= 1.0mA
ΔVGS(th) Change in VGS(th) with temperature
-
-
-4.0 mV/OC VGS = VDS, ID= 1.0mA
IGSS Gate body leakage
-
-
100
nA VGS = ± 20V, VDS = 0V
IDSS Zero gate voltage drain current
-
-
1.0
µA VGS = 0V, VDS = Max Rating
ID(ON) On-state drain current
0.5 -
-
A
VGS = 4.5V, VDS = 25V
1.0 -
-
VGS = 10V, VDS = 25V
-
-
15
VGS = 3.0V, ID = 20mA
RDS(ON) Static drain-to-source on-state resistance
-
-
10
Ω VGS = 4.5V, ID = 100mA
-
-
10
VGS = 10V, ID = 200mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
0.75 %/OC VGS = 10V, ID = 200mA
GFS Forward transductance
125 -
- mmho VDS = 25V, ID = 100mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
-
- 125
VGS = 0V,
-
-
70
pF VDS = 25V,
-
-
25
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
-
20
-
-
15
VDD = 25V,
-
-
25
ns ID = 200mA,
RGEN = 25Ω
-
-
20
VSD Diode forward voltage drop
-
-
1.8
V VGS = 0V, ISD = 200mA
trr
Reverse recovery time
- 300 -
ns VGS = 0V, ISD = 200mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V 10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
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