TN6719A 데이터 시트보기 (PDF) - Fairchild Semiconductor

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TN6719A

NPN High Voltage Amplifier

Fairchild Semiconductor 

NPN High Voltage Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

V(BR)CBO

V(BR)EBO

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 1.0 mA, IB = 0

IC = 100 µA, IE = 0

IE = 1.0 mA, IC = 0

VCB = 200 V, IE = 0

VEB = 6.0 V, IC = 0

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

VCE = 10 V, IC = 1.0 mA

VCE = 10 V, IC = 10 mA

VCE = 10 V, IC = 30 mA

IC = 30 mA, IB = 3.0 mA

VCE = 10 V, IC = 30 mA

SMALL SIGNAL CHARACTERISTICS

Ccb

Collector-Base Capacitance

hfe

Small-Signal Current Gain

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

VCB = 20 V, f = 1.0 MHz

IC = 15 mA, VCE = 100 V,

f = 20 MHz

300

V

300

V

7.0

V

100

nA

100

nA

25

40

40

200

0.75

V

0.85

V

3.5

pF

1.5

15

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