TPA120(1998) 데이터 시트보기 (PDF) - STMicroelectronics
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TPA120 Datasheet PDF : 5 Pages
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TPA SERIES
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Value
P
Power dissipation on infinite heatsink
IPP
Peak pulse current
ITSM Non repetitive surge peak on-state current
I2t
I2t value for fusing
Tamb = 50 °C
1.7
10/1000 µs
50
8/20 µs
100
tp = 20 ms
30
tp = 20 ms
9
dV/dt
Tstg
Tj
TL
Critical rate of rise of off-state voltage
VRM
5
Storage temperature range
Maximum junction temperature
- 55 to + 150
150
Maximum lead temperatureforsolderingduring 10s at 5mm from case
230
THERMAL RESISTANCES
Unit
W
A
A
A2s
kV/µs
°C
°C
°C
Symbol
Rth (j-l)
Rth (j-a)
Parameter
Junction to leads (Llead = 10mm)
Junction to ambient on printed circuit (Llead = 10 mm)
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C)
Value
60
100
Unit
°C/W
°C/W
Symbol
VRM
IRM
VR
VBR
VBO
IH
IBO
IPP
C
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Continuous Reverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
Type
TPA62
TPA68
TPA100
TPA120
TPA130
TPA180
TPA200
TPA220
TPA240
TPA270
IRM @ VRM
max.
µA
V
2
56
2
61
2
90
2
108
2
117
2
162
2
180
2
198
2
216
2
243
IR @ VR
max.
note 1
µA
V
50
62
50
68
50
100
50
120
50
130
50
180
50
200
50
220
50
240
50
270
VBO @ IBO
max.
note 2
V
mA
82
800
90
800
133
800
160
800
173
800
240
800
267
800
293
800
320
800
360
800
IH
min.
note 3
mA
150
150
150
150
150
150
150
150
150
150
C
max.
note 4
pF
150
150
100
100
100
100
100
100
100
100
Note 1: IR measured at VR guarantee VBRmin ≥ VR
Note 3: See test circuit 2.
Note 2: Measured at 50 Hz (1 cycle) - See test circuit 1.
Note 4: VR = 1V, F = 1MHz. Refer to fig.3 for C versus VR.
2/5
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