TPC8115 데이터 시트보기 (PDF) - Toshiba
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TPC8115 Datasheet PDF : 7 Pages
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RDS (ON) – Ta
25
Common source
Pulse test
20
−2.5 A
ID = −10 A
VGS = −1.8 V
15
−1.8 A
ID = −2.5 / −5.0 / −10 A
10
VGS = −2.5 V
5
VGS = −4.5 V
ID = −2.5 / −5.0 / −10 A
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPC8115
−100
−10
−10
−5
−3
IDR – VDS
−1
−0.1
0
−1
VGS = 0 V
Common source
Ta = 25°C
Pulse test
0.2
0.4
0.6
0.8
1
Drain-source voltage VDS (V)
100000
Capacitance – VDS
10000
Ciss
1000
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
−0.1
−1
Coss
Crss
−10
Drain-source voltage VDS (V)
−100
Vth – Ta
−2
Common source
VDS = −10 V
−1.6
ID = −1 mA
Pulse test
−1.2
−0.8
−0.4
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
0.4
0
0
50
100
150
200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
−30
−6
Common source
ID = −10 A
−25 Ta = 25°C
Pulse test
−20
−8
−5
−4
VDD = −16 V
−4
VDS
−15
VGS
−3
−10 −8
−4
−2
−5
VDD = −16 V
−1
0
0
0
40
80
120
160
Total gate charge Qg (nC)
5
2009-03-16
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