TPC8119 데이터 시트보기 (PDF) - Toshiba
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TPC8119 Datasheet PDF : 7 Pages
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RDS (ON) – Ta
40
Common source
Pulse test
32
24
VGS = −4 V
−5 A
−10 A
ID = −2.5 A
16
−5,−10 A
8
VGS = −10 V
ID = −2.5 A
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPC8119
−100
−10
IDR – VDS
−5
−4
−10
−3
−1
VGS = 0 V
−1
−0.1
0
Common source
Ta = 25°C
Pulse test
0.2
0.4
0.6
0.8
1
Drain−source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
−0.1
−1
−10
Drain−source voltage VDS (V)
−100
Vth – Ta
−2.5
−2
−1.5
−1
Common source
−0.5 VDS = −10 V
ID = −1mA
Pulse test
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C
2
(1)
1.6
PD – Ta
(1)Device mounted on a glass-epoxy board
(a) (Note 2a)
(2)Device mounted on a glass-epoxy board
(b) (Note 2b)
t = 10 s
1.2
(2)
0.8
0.4
0
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
−30
VDD = −24V
−30
Common source
ID = −11 A
Ta = 25°C
−25
Pulse test
−20
−20
VDS
−12
−10
−6
−6
VGS
−15
VDD = −24V −10
−12
−5
0
0
0
10
20
30
40
50
60
Total gate charge Qg (nC)
5
2009-09-29
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