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TPD1028BS 데이터 시트보기 (PDF) - Toshiba
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TPD1028BS
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS IC
Toshiba
TPD1028BS Datasheet PDF : 8 Pages
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Electrical Characteristics
(T
j
= 25°C)
Characteristic
Drain-source breakdown
voltage
Operating supply voltage
High level input voltage
Low level input voltage
Current at output off
Input current
On resistance
Thermal shutdown temperature
Overcurrent protection
Shorted load detection
voltage
Switching time
Diode forward voltage
between drain and source
Symbol
V
(BR) DSS
V
DD
V
IH(1)
V
IH(2)
V
IH(3)
V
IL(1)
V
IL(2)
V
IL(3)
I
DSS(1)
I
DSS(2)
I
IN
R
DS(ON)
T
S
I
S(1)
I
S(2)
V
DS
t
ON
t
OFF
V
DSF
Test
Cir-
Test Condition
cuit
―
V
IN
= 0 V, I
D
= 10 mA
―
―
―
V
DS
= 24 V, I
D
= 1 A
―
V
DS
= 10 V, I
D
= 0.75 A
―
V
DS
= 38 V, I
D
= 0.75 A
―
V
DS
= 24 V, I
D
= 10 µA
―
V
DS
= 10 V, I
D
= 10 µA
―
V
DS
= 38 V, I
D
= 10 µA
―
V
IN
= 0 V, V
DS
= 40 V
V
IN
= 0 V, V
DS
= 24 V
―
V
IN
= 5 V,
at normal operation
―
V
IN
= 5 V, I
D
= 1 A
―
V
IN
= 5 V
―
V
DS
= 24 V, V
IN
= 5 V,
during inrush
―
V
DS
= 24 V, V
IN
= 5 V,
when shorted load
―
when shorted load
1
V
DS
= 24 V, V
IN
= 5 V,
R
L
= 24
Ω
―
I
F
= 1.5 A
Test Circuit 1
TPD1028BS
Min Typ. Max Unit
40
―
―
V
―
―
38
V
4.5
5
5.5
3.9
5
5.7
V
3.9
5
5.7
―
―
0.8
―
―
0.8
V
―
―
0.8
―
―
100
µA
―
―
10
―
―
300
µA
―
―
0.25
Ω
―
160
―
°C
―
10
―
A
―
3
―
―
12
―
V
―
70
―
µs
―
120
―
―
0.9 1.8
V
4
2002-10-24
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