MJD41C 데이터 시트보기 (PDF) - Motorola => Freescale

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MJD41C

Complementary Power Transistors

Motorola => Freescale 

MJD41C MJD42C

2

1.6

IC = 1 A

2.5 A

1.2

TJ = 25°C

5A

0.8

0.4

0

10

20 30 50

100

200 300 500

1000

IB, BASE CURRENT (mA)

Figure 7. Collector Saturation Region

300

200

100

70

50

30

0.5

TJ = 25°C

Cib

Cob

1

23 5

10

20 30 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Capacitance

1

0.7 D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07

0.05 0.02

0.03

0.01

0.02 SINGLE PULSE

0.01

0.01 0.02 0.03 0.05 0.1

RθJC(t) = r(t) RθJC

RθJC = 6.25°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2 0.3 0.5 1

2 3 5 10 20 30 50

t, TIME (ms)

Figure 9. Thermal Response

100 200 300 500 1000

10

500 µs

100 µs

5

3

2

dc

1 ms

5 ms

1

0.5

WIRE BOND LIMIT

0.3

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

0.1

CURVES APPLY BELOW RATED VCEO

0.05

0.03

TC = 25°C SINGLE PULSE

TJ = 150°C

MJD41C, 42C

0.01

1

2 3 5 7 10

20 30 50 70 100

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 10. Maximum Forward Bias

Safe Operating Area

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 10 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

vlimits are valid for duty cycles to 10% provided TJ(pk)

150_C. TJ(pk) may be calculated from the data in Fig-

ure 9. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

4

Motorola Bipolar Power Transistor Device Data

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